Informationssystem der Friedrich-Alexander-Universität Erlangen-Nürnberg © Config eG 
FAU Logo
  Sammlung/Stundenplan    Modulbelegung Home  |  Rechtliches  |  Kontakt  |  Hilfe    
Suche:      Semester:   
   Räume   Forschungs-
   Telefon &

Einrichtungen >> Technische Fakultät (TF) >> Department Werkstoffwissenschaften (WW) >>
Lehrstuhl für Werkstoffwissenschaften (Materialien der Elektronik und der Energietechnologie)
Anschrift: Martensstr. 7, 91058 Erlangen
Tel.:09131 85-27633Fax:09131 85-28495

Compound semiconductors form a central topic at the Institute, in particular the problems of crystal growth. Other activities concern phosphors and optical data storage materials.
The Institute has developed strong ties to industry. As will be seen below most research projects are linked to co-operations with industrial partners. In these co-operations the Institute generally covers the more fundamental aspects of the corresponding problem. In this way the Institute forms part of the general concept of the Department of Materials Science and Engineering, which defines itself as a place of basic research as well as a partner to industry. A mayor industrial activity, the company SiCrystal AG, which is a supplier of silicon carbide semiconductor material, has developed out of the Institute VI.
A completely new activity in the field of wide-gap semiconductor growth was opened by starting a project on AlN. Aim of the project is the growth of bulk material, which, so far, is an unsolved problem in the field of crystal growth.
Also the activities of the Crystal Growth Laboratory (CGL), the working group of Prof. Dr. Georg Müller, have been successfully expanded in 2001. In its traditional fields of experimental crystal growth of Silicon and III-V semiconductors as well as of fluoride crystals the R&D merits of CGL contributed to the maintenance of the market position of its industrial partners. Their confidence in CGL is evident from the fact that the co-operations were continued on the same level despite of the economic contractions of the global semiconductor market. In the field of numerical modelling of crystal growth processes CGL has considerably extended its activities. This is underlined by the fact that in 2001 more than 20 license contracts about the software products developed at CGL have been placed with world leading companies and research institutions. Furthermore, CGL has spread its activities to new research areas in 2001. For example it started to research on oxide crystal growth and on bulk growth of nitrides as well as on fundamental metallurgical problems like the influence of convection on the microstructure formation in technical aluminium alloys during solidification.

Forschungsrelevante apparative Ausstattung

Total space: 1430 m2
Laboratory space: 1100 m2, including 90 m2 in the Technology Hall of the Department. 120 m2 laboratory space plus office and laboratories, which belongs to the Laboratory of Crystal Growth of the "Fraunhofer Institute for Integrated Circuits".
Main Equipment
Crystal growth
·3 inductively heated reactors for SiC bulk crystal growth (T £ 2500 C; p £ 30 mbar), one of them provided with in-situ growth control by X-rays
·resistively heated high pressure (p £ 200 bar) and high temperature (T £ 2300 °C) reactor for SiC and ZnSe liquid phase growth
·2 high-pressure Czochralski pullers
·3 high-pressure multi-zone cold wall furnaces (for 2" - 6" crystal diameter, used for VGF growth of InP and VGF growth of GaAs)
·Multi zone furnace (used for growth of CaF2 crystals)
·4 furnaces for solution growth (for 1" crystal diameter, used for growth of CuInSe2 by THM and SBM)
·Mirror furnace (for 1" crystal diameter, used for FZ growth of GaAs)
·Several multi zone furnaces for crystal growth of small diameter crystals and tube furnaces for sample preparation
·Liquid phase epitaxy facilities
·Facility for AlN sublimation growth process
·Micro-puller for fiber growth
·HVPE (hydrogenated vapour phase epitaxy) facility for GaN
·Centrifuge for experiments under high gravity (centrifuge radius 50-120 cm, rotation speed 0-250 rpm) Analysis and characterization of materials
·Particle size analyse Beckmann-Coulter
·"Labor-Zickzacksichter Alpine AG" for production of defined powder fractions
·Scanning electron microscope, Jeol 6400
·Cathodoluminescence set to the Jeol 6400, Oxford Instr.
·Optical/infrared microscope, Reichert-Jung
·Other different optical microscopes
·Optical Set-up for photoluminescence and absorption spectroscopy of wide band gap semiconductors by a blue/uv - argon ion laser system
·Mapping system for optical spectroscopy of semiconductor wafers
·Interferometric profilometer for surface analysis of semiconductor wafers
·2 photo- and thermoluminescence systems with X-ray excitation
·Excimer laser system including dye laser and Raman shifter
·X-ray Laue camera
·Hall-measurement-system (temperature dependent 15 K-650 K)
·Laterally resolved resistivity measurements by 4-point-probe-method and spreading resistance (resolution 20 µm)
·Measurement system for characterization of deep and shallow levels by capacitance techniques (CV, DLTS) and by conductance techniques (TSC, PICTS)
·Photoluminescence system (14 K and 300 K), IR-absorption, both systems suitable for mapping
·Atomic absorption spectrometry for trace analysis
·Differential Thermal Analysis for determination of phase diagrams
·Differential Scanning Calorimeter for thermodynamic and kinetic studies
·Frequency converter (P = 90 kW, f = 1...1000 Hz)
·2 He-Temperature cryostats, T-controlled
·Closed-cylce cryostat (15 K - 320 K), T-controlled
Preparation and metallography
·Inner diameter saw and precision grinding systems (G&N, Erlangen) for wafering and surface preparation of SiC wafers
·Facilities for preparative work related to III-V compound wafer preparation (grinder, annular saws, lapping and polishing equipment)
·2 evaporation systems
·Sputtering systems (DC, 6" target diameter) Others
·Magnet for axial steady field (inner diameter 50 cm, Bmax = 0.2 T)
·2 magnets for rotating fields (inner diameter 15 cm, Bmax = 10 mT)
·Magnet system for rotating fields (variable diameter)
·Gaussmeter for magnetic induction measurements (3 axes)
·15 powerful PCs for numerical modelling


A number of scientific links have been developed in recent years with other Institutes of the Department as well as the Technical Faculty. Particularly strong connections exist to the Institute of Glass and Ceramics (including two common DFG-projects), to the Fraunhofer Institute for Integrated Circuits (Prof. Ryssel), the Institute of Fluid Mechanics (Prof. Durst) and the Institute of Applied Mathematics (Prof. Gräbner).

Prof. Dr. Christoph J. Brabec

Manuela Baumer
Irina Döhrer
Elisabeth Henneberger
Claudia Koch

Akademische Lehrstuhlverwaltung
PD Dr. Miroslaw Batentschuk

Prof. Dr.-Ing. Peter Wellmann
Prof. Dr. Christoph J. Brabec
Prof. Dr. Wolfgang Heiß
Prof. Dr. Dr.-Ing. habil. Michael Thoms
Prof. Dr. Olga Kasian

PD Dr. Hans-Joachim Egelhaaf
Prof. Dr. Dr.-Ing. habil. Michael Thoms
Dr.-Ing. Thomas Heumüller

PD Dr. Miroslaw Batentschuk

Wiss. Mitarbeiter und Doktoranden
Vanessa Arango, M. Eng
Ecem Aydan Alkan, M. Sc.
Dr. Anastasiia Barabash
Robin Basu, M. Sc.
Max Bibrack, M. Sc.
Andreas Bornschlegl, M. Sc.
Elshaimaa Darwish, M. Sc.
Manuel Daum, M. Sc.
Dr. rer. nat. Andreas Distler
Lirong Dong, M. Sc.
Dr.-Ing. Tian Du
Jack Elia, M. Sc.
Mingjie Feng, M. Sc.
Sarmad Feroze, M. Eng.
Dr. Karen Forberich
José Garcia Cerrillo, M. Eng.
Marina Günthert, M. Sc.
Julian Haffner-Schirmer, M. Sc.
Dr. Maria Hammer
Dr. Jens Hauch
Dipl.-Ing. Madeleine Heyder
Huiying Hu, M. Sc.
Jonas Ihle, M. Sc.
Sumbal Jamshaid, M. Sc.
DongJu Jang, M. Sc.
Violetta Kalancha, M. Sc.
Inna Khyzhna, M. Sc.
Manuel Kollmuß, M. Sc.
Mengqin Kong, M. Sc.
Christian Kupfer, M. Sc.
Leopold Lahn, M. Sc.
Dr. Vincent Marc Le Corre
Chaohui Li, M. Sc.
Chao Liu, M. Sc.
Dr. rer. nat. Larry Lüer
Dr. Masoudeh Maleki
Benfang Niu, M. Sc.
Dr. Andres Osvet
Zijian Peng, M. Eng
Shudi Qiu, M. Eng
Viktor Rehm, M. Sc.
Abdus Saboor, M. Phil
Jana Schultheiß, M. Sc.
Dr. Hannah Smith
Qizhen Song, M. Sc.
Marc Steinberger, M. Sc.
Johannes Steiner, M. Sc.
Sven Strüber, M. Sc.
Albert These, M. Sc.
Jingjing Tian, M. Sc.
Josua Wachsmuth, M. Sc.
Rong Wang, M. Sc.
Paul Weitz, M. Sc.
Ernst Wittmann, M. Sc.
Jonas Wortmann, M. Sc.
Dr. Jianchang Wu
Zhenni Wu, M. Sc.
Qian Xie, M. Sc.
Zhiqiang Xie, M. Sc.
Junyi Xu, M. Eng.
Dr. Lingpeng Yan
Endong Zhang, M. Sc.
Heyi Zhang, M. Sc.
Jiyun Zhang, M. Eng.
Kaicheng Zhang, M. Eng.
Shuyu Zhou, M. Sc.

Nichtwiss. Personal
Leonie Brandner
Joshua Kirsch
Hans-Dieter Schmidt, TA
Corina Winkler
Ronald Wirth

  • keine Forschungsprojekte eingetragen
UnivIS ist ein Produkt der Config eG, Buckenhof